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B649A Transistor

රු25.00

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Product description.

B649A Transistor
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 27 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO126

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No, F-14, Main bus stand complex, kaduwela
© 2017. All right reserved. Hogwa Technologies

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