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D313-NPN TRANSISTER
රු90.00
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Product description.
D313
Type Designator: 2SD313
The material of the Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 130 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: –
Package: TO220
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Store address.
No, F-14, Main bus stand complex, kaduwela
© 2017. All right reserved. Hogwa Technologies
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